EPC2016C

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Bangaren masana'anta	EPC2016C
Mai ƙira	EPC
Bayani	GANFET N-CH 100V 18A DIE
Kashi	m semiconductor kayayyakin
Iyali	transistor - fets, mosfets - guda
Tsawon Rayuwa:	New from this manufacturer.
Bayarwa:	DHL FedEx Ups TNT EMS
Biya	T/T Paypal Visa MoneyGram Western Union
Takardar bayanai	EPC2016C PDF

samuwa

A Stock	134,646
UnitPrice	$ 2.45000

EPC2016C Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

EPC2016C Ƙayyadaddun bayanai

Nau'in	Bayani
jerin:	eGaN®
kunshin:	Tape & Reel (TR)Cut Tape (CT)
matsayin bangare:	Active
nau'in fet:	N-Channel
fasaha:	GaNFET (Gallium Nitride)
magudana zuwa wutar lantarki (vdss):	100 V
na yanzu - ci gaba da magudanar ruwa (id) @ 25°c:	18A (Ta)
wutar lantarki (max rds on, min rds on):	5V
rds akan (max) @ id, vgs:	16mOhm @ 11A, 5V
vgs(th) (max) @ id:	2.5V @ 3mA
cajin kofa (qg) (max) @ vgs:	4.5 nC @ 5 V
vgs (max):	+6V, -4V
ƙarfin shigarwa (ciss) (max) @ vds:	420 pF @ 50 V
fet siffa:	-
wutar lantarki (max):	-
zafin aiki:	-40°C ~ 150°C (TJ)
nau'in hawa:	Surface Mount
kunshin na'urar mai bayarwa:	Die
kunshin / harka:	Die

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