IPD048N06L3GBTMA1

IPD048N06L3GBTMA1

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Manufacturer Part IPD048N06L3GBTMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 60V 90A TO252-3
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet IPD048N06L3GBTMA1 PDF

Availability

InStock 209,429
UnitPrice $ 1.34000

IPD048N06L3GBTMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPD048N06L3GBTMA1 Specifications

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 30 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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Shipping Rate

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Shipping Methods

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